| 摘要 |
PURPOSE:To obtain the desired depth of etching by comparing the measured value of carrier secondary ion current emitted at collision of iron beam with the measured value of distribution of carrier density in the depth direction by the combination of carrier distribution non-contact measuring method and carrier density measuring method for etching plane by using an ion microanalyzer. CONSTITUTION:A measured value (n) of depth distribution of density from a non-contact carrier density distribution measuring device 101 is inputted into a CPU102. At the same time, desired value d0 of depth of etching from a teletypewriter 103 is inputted into the CPU102. Next, a ready signal 108 is inputted from an ion beam etching device 104, after which an etching start signal 107 is supplied. During progress of etching, secondary ion current value of the carrier from a secondary ion current measuring devide 105 is inputted, thereby estimating carrier density (n) of surface layer to be observed during etching. Also ion implantation can be controlled by measuring a difference in threshold voltage among plural MOS transistors having different densities. |
