| 摘要 |
PURPOSE:To form a photodetector having less loss and high sensitivity by growing a thin film crystal of SiC having wider energy width of forbidden band than Si on the surface of a photoreceiving unit, thereby forming a hetero junction. CONSTITUTION:A P type silicon substrate (Si substrate) 1, an N type region 2 and a dioxidized silicon film (SiO2 film) 3 are provided, and a P-N junction is formed in the boundary between the P type region and the N type region. A thin film 17 of SiC having an energy width wider than that of a forbidden band of silicon is formed by crystal growth on the surface of the photoreceiving unit. To operate the photoreceiving element, the N type region is formed in the prescribed pattern by applying suitable known means to the substrate 1 of P type silicon, carbon (or carbide silicon) is laminated by ion implanting method on the surface of the N type region, then heat-treated, and a thin film crystal of SiC is grown on the surface of the photoreceiving unit. |
