| 摘要 |
PURPOSE:To achieve stability of the emission characteristics and improvement of the longevity by periodically stacking first layer regions composed of non- single crystal silicon containing hydrogen atoms, and second layer regions different in the optical band gap from the first layer regions, a pair of each region making one unit respectively. CONSTITUTION:On a lower electrode 102 provided on a substrate 101, a light emitting device is composed of an electrical insulating layer 103, a light emitting layer 104, and an upper electrode 105 provided on the light emitting layer 104. The light emitting layer 104 has a multilayer structure wherein first layer regions I composed of non-Si:H and second layer regions II different in the optical band gap Egopt from the layer regions I are periodically stacked, as one unit respectivly. And in order to effectively achieve the effect, the first layer regions I and the second layer regions II to be stacked in a periodical structure are alternately stacked by respectively selecting a layer thickness so as to generate a quantum-mechanical size effect, forming a so-called superlattice structure. |
