| 摘要 |
PURPOSE:To increase considerably the aperture rate of a picture-element electrode by narrowing the interval between a lead part and the picture-element electrode by using a lift-off method. CONSTITUTION:A thermally oxidized Ta2O5 film 2 for stopping etching is formed on a ''Pyrex glass'' 4 and a Ta thin film 6 is further formed by sputtering. Then, the Ta thin film 6 is etched by using photoresist 8 as a mask to form lead parts 7. At this time, the lead parts 7 are overetched so that the photoresist 8 as the mask is overhung. In this state, an ITO (In2+SnO2) thin film 9 is formed by EB vapor deposition and lifted off to remove the ITO thin film 9 on the photoresist 8. Further, picture element electrodes 10 are formed and then anode oxidation is carried out to form Ta2O5 films 11 at the lead parts 7 and MIM element formation parts. Intervals between the lead parts 7 and picture-element electrodes 10 are determined by the overhung size of the photoresist 8 to obtain a 0.5-3mum dimension easily. |
