| 摘要 |
PURPOSE:To obtain an epitaxial layer having favorable crystallinity when the filmis to be formed on the surface of a substrate by a method wherein etching gas is introduced in a reaction apparatus housing the substrates at first, ultraviolet rays are irradiated thereto to purify the surfaces of the substrates according to the decomposed reaction seeds, then gas is changed over to the reaction gas for formation of the films, and ultraviolet rays are irradiated similarly. CONSTITUTION:A rotary desk 2 to load substrates 8 manufactured of Si, sapphire, etc., is arranged in a reaction chamber 1 having an etching gas feed pipe 3, a decomposition gas feed pipe 4 and an exhaust pipe 5 for evacuation. Moreover, a light source 6 consisting of a mercury lamp or a laser device for generation of ultraviolet rays supported by a support post 7 through a transparent plate is arranged on the upper side of the reaction chamber 1, and after the reaction chamber 1 is evacuated to a vacuum, gas such as CF4, etc., is sent in at first. Then ultraviolet rays are irradiated to the substrates 8 in this condition, the substrates 8 are purified at a low temperature according to the reaction seeds of decomposed gas, and after then, gas is changed over to SiH4, ultraviolet rays are irradiated similarly to decompose the gas, and the desired films are generated on the substrates 8. |
