发明名称 RADIATION MASK FOR X RAY LITHOGRAPHY AND MANUFACTURE THEREOF
摘要 <p>In conventional optical masks for X-ray lithography, which consist of a support layer and an absorber structure applied to one side, the heating occurring during the exposure due to the different coefficients of thermal expansion of support and absorber material results in bending of the optical mask (bimetallic effect). In the heat-insensitive mask according to the invention, on the other hand, the absorber structure 102, 103 is applied symmetrically with respect to the layer centre 106 of the support layer 101 in terms of its layer thickness, so that the forces due to the heating are self-compensating in terms of bending moment. <IMAGE></p>
申请公布号 JPS59116749(A) 申请公布日期 1984.07.05
申请号 JP19830234119 申请日期 1983.12.12
申请人 YUUROJIRU EREKUTORONITSUKU GMBH 发明人 GERUHARUTO FUITSUSHIYAA
分类号 G03F1/22;H01L21/027 主分类号 G03F1/22
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