| 摘要 |
PURPOSE:To eliminate a transfer error due to a fact that a bubble is caught by an electric conductor pattern edge, by executing a heat treatment before forming or after forming a passivation film of a chip, in a manufacturing method of an ion implantation type magnetic bubble element. CONSTITUTION:An electric conductor layer 4 for controlling a bubble is formed through the first insulating layer 3, on a magnetic layer 2 on which an ion implanting layer 1 for transferring the bubble is provided, and a magneto-resistance effect element 5 is connected to a part of the electric conductor layer 4. An electric conductor layer 7 is formed on said layer through the second insulating layer 6, and also a passivation film 8 of a chip is formed on said layer. A large effect for eliminating a transfer error of the bubble is obtained by executing an annealing in a stage after forming this electric conductor layer 7 or after forming the passivation layer 8. |
