| 摘要 |
PURPOSE:To prevent the increase of a DC leak current due to the gate leak and field leak of a defective memory cell by cutting off an electric power supply path to a normal cell column or row including a defective bit by an electric conducting means such as a fuse and a switch. CONSTITUTION:If a defective memory cell is found in a normal memory cell array 1 by a test, etc., the normal memory cell column 8 including this defective memory cell is replaced by a stand-by memory cell column and the switch 10a connected to the 2nd source voltage line 11a which supplies electric power to the normal cell column 8 including this defective memory cell is opened. The normal memory cell column 8 is released by the opening of this switch 10, so the DC leak current due to the field leak and gate leak of the defective memory cell 9 is cut off. |
