SOLID-STATE IMAGE PICKUP ELEMENT

摘要

PURPOSE:To obtain a sensor having double high resolution and density by dividing a gate region of an electrostatic induction transistor into two, attaining electric independence and using the region in common at picture element section. CONSTITUTION:A source 13 is diffused on an upper part of a substrate 12 having a transparent electrode 11 via an n<+> layer 10 and a drain 14 is embedded to a position corresponding to a source in the substrate 12. Source wire lines by a signal electrode 15 are sectioned by a separating region 16 by an embedded oxide film and a gate 17 is diffused into an epitaxial layer 18 similarly as the source 13 so as to clip the source 13. Each gate 17 is connected by bridging over a separation region 16 with a readout electrode 19 in the direction orthogonal to the source wire line by the signal electrode 15.