| 摘要 |
PURPOSE:To bring a surface active agent into contact with a film to be etched positively, and to improve etching treatment by making the surface active agent contained in an etching liquid when a photo-resist film is formed on an insulating film, a metallic film, etc. formed on the surface of a semiconductor substrate and etching the insulating film, the metallic film, etc. while using the photo-resist film as a mask. CONSTITUTION:The insulating film, the metallic film, etc. formed on the surface of the semiconductor substrate are coated with the photo-resist film of a predetermined pattern, and the insulating film and the metallic film are formed to desired patterns through etching by using a mixed liquid of fluoric acid and ammonium fluoride while using the photo-resist film as the mask. The fluoric acid group surface active agent is added previously into the mixed liquid at that time. The film to be treated is dipped in the surface active agent and then the film is placed into the etching liquid in order to normally improve the permeation of the etching liquid, but the active agent does not always spread over the film to be treated, and the etching liquid is often repelled. Accordingly, the surface active agent is added previously to the etching liquid. |
