| 摘要 |
PURPOSE:To obtain the optoelectric transducer element, width thereof is widened because the wiring section of a comb-shaped electrode has no capacitance, resistance thereof can be lowered and which does not function as a photosensor and response thereof is fast, by setting up a band-shaped electrode opposed only to the projecting section of the comb-shaped electrode as an effective electrode to the opposite surface and holding an amorphous semiconductor thin-film. CONSTITUTION:The band-shaped electrode 14 is set up on an insulating substrate 13 made of glass, ceramics, heat-resisting high molecules or the like. The band-shaped electrode 14 is formed by evaporating a metal or an ITO by using a metallic mask or integrally molding a metallic foil together with heat-resisting high molecules such as polyimide. The P-I-N structure of amorphous silicon is represented as the amorphous semiconductor thin-film 5 coating the band-shaped electrode except a terminal section. The transparent comb-shaped electrodes 10, 11 are formed by evaporating the ITO and SnO2 on the whole surface of the amorphous semiconductor thin-film 5 by using electron-beam evaporation or sputtering and forming patterns. Hydrochloric acid or phosphoric acid is used as an etching liquid, and it can etch only the transparent electrodes. Since only the projecting sections 10a, 11a of the transparent comb- shaped electrodes 10, 11 are opposed to the band-shaped electrode 14 and constitute the photosensor, the wiring sections 10b, 11b have no capacitance with the band-shaped electrode 14, wire width is widened, and resistance can be lowered. |
