| 摘要 |
PURPOSE:To process the main surface of a wafer by forming a hermetically sealed chamber through free attachment or release of processing vessel to/from the stage allowing free placement of wafer and then supplying the processing gas into the chamber and then exhaust it therefrom. CONSTITUTION:After preprocessing, a wafer 4 is carried in and placed on the surface 3 of a stage 1, the stage 1 is moved upward 2 and engaged with a vessel 22. Thereby, a hermetically sealed chamber 23 is formed by a sealing ring 9. Thereafter, a valve 18 is switched and exhausts a chamber 23 to a vacuum condition 15, and a valve 34 is switched. Thereby N2 is injected into a tank 27 and generated processing gas is supplied to the chamber 23. The valve 18 closes and the valve 20 opens. Thereby, the processing gas is gradually exhausted from a hole 10 and the chamber 23 is kept in the fresh and constant ambient. The processing gas in the contact with the wafer decomposes water content and thereby intensifies bonding characteristic with the resist. After a constant period, a valve 34 is switched and thereby supply of N2 is suspended, residual gas is released 35 and supply of processing gas is suspended. Thereafter, the stage 1 moves downward, releasing the chamber 23. Accordingly, the wafer 4 can be delivered. With such structure, a constant processing quality can be ensured and working efficiency can also be improved. |
