| 摘要 |
PURPOSE:To avoid excess hardening of pattern countour parts produced at the time of ion implantation and prevent the occurrence of peeling failure by peeling solution by forming photo resist patterns in an inverted truncated cone form in which the upper part is wider than the lower part. CONSTITUTION:A first layer 3 is formed by coating negative type photo resist on a substrate and subjecting the same to prebaking treatment. Next, a second layer 4 is formed in the similar manner by using negative type photo resist of a photo sensitivity higher than that of the photo resist of the first layer. Next, the photo resists are exposed through a glass mask 5 and are developed to leave the portions of 6, 7 respectively, whereby the patterns of inverted truncated cone form wherein the upper layer (second layer) is wider than the lower layer (first layer) are formed. If the patterns are formed in this way, the contour parts of the photo resists forming the patterns will not be subjected to radiation despite minor shrinkage in the upper part of the photo resists through ion implantation of a high concentration, thus excessive hardening may be avoidd. In the case of using positive type resist, the use of the photo resist of a lower photo sensitivity for the upper part gives equally good results. |
