| 摘要 |
PURPOSE:To effectively prevent contamination by metal of wafer, simplify the cleaning process and drastically suppress generation of crystal defect by contamination of metal in the heat process by supporting the rear surface of wafer with non-metallic material. CONSTITUTION:The rear surface of wafer is supported by non-metallic material. For example, a semiconductor wafer 20 exposed to the ion X is held by the lower and upper clamping members 22, 24 made of non-metallic material such as silicon, silica or silicon carbide and the dose measuring terminal 26 is placed in contact with the lower surface of wafer 20 through the lower clamping member 22. Thereby, contamination by metal of semiconductor wafer 20 can be prevented. |
