| 摘要 |
PURPOSE:To obtain a device of high quality with high yield by a method wherein a connection hole for a semiconductor element or a part thereof is formed of a metallic or an alloy layer which constitutes a wiring layer, and the wiring region except the hole part is composed of only a kind thereof. CONSTITUTION:A P-base 105, an N<+> emitter 106, and an N<+> collector lead-out layer 107 are formed by selectively providing apertures through an SiO2 film 102 on an N type Si substrate 101. Next, a hole is bored 108 through the SiO2 102, Pt is vapor-deposited, being heat-treated, and a PtSi 109 is formed on apertures 106-108, then removing the Pt with aqua regia. Next, Ti/W metallic layers 110-112 are provided, and the elements are connected each other by applying an Al wiring. At this time, since there is no Ti/W under the mutual connection Al wiring, reverse trapezoidal cross-section is not caused at the time of Al etching, the problem of wiring lifetime and others in quality can be eliminated, therefore a device with a metal-semiconductor junction diode being built-in is obtained with high yield. |
