| 摘要 |
PURPOSE:To obtain a single crystal thin film of high quality suitable for IC on an amorphous insulating substrate by single crystallization of polycrystalline or amorphous Si film by heat treatment which are laminated to be layered on the substrate with plural films having different softening points respectively. CONSTITUTION:A phosphorus glass layer 2 concentration of which is 10mol% is produced on a substrate 1 consisting of fused silica and SiO2 film 3 not containing impurity is coated thereon. Then, a polycrystalline Si layer 4 is laminated on said film 3 and covered with a SiO2 protective film 5 which prevents deformation of fused Si and inclusion of atmospheric gas when said polycrystalline Si layer 4 is fused by zone fusion to be single crystalline. After that the polycrystalline Si layer 4 is made to be single crystalline by heating with laser irradiation or a zone heater to become thin film for forming semiconductor elements. Recrystallization of polycrystalline Si is described above, but amorphous Si is also available as a parent material. Thus, the thin film covering large area is obtained. |
