| 摘要 |
PURPOSE:To manufacture a semiconductor device which has a short cleaning time and high performance in a high yield by containing the total content rate of heavy metal elements and alkaline metal elements at the specific value or lower. CONSTITUTION:The total content rate of heavy metal elements such as Fe, Ni and Cr is set to 100ppm or less in a silicon carbide material for manufacturing a semiconductor such as process tube or a wafer board used for manufacturing a semiconductor device. This is because, when the content rate exceeds 100ppm, a long cleaning time is required until the life time of the carrier of a semiconductor device becomes the prescribed value or higher. The total content rate of alkaline metal elements is set to 10ppm or lower. This is because, if the content exceeds 10ppm, a long cleaning time is required until the mobile ion density NFB in an SiO2 film of the semiconductor device becomes the prescribed value or lower. |
