| 摘要 |
PURPOSE:To prevent disconnection at the stepped portion by laminating an aluminum film formed at a low temperature on the aluminum film formed under a high temperature and forming the tapered area on the upper surface of wiring by means of a difference in the etching speeds. CONSTITUTION:An Si substrate 6 is heated up to about 300 deg.C, aluminum 8 containing Si of 2wt% is sputtered and thereby defect of insulation through an insulating film 7 to the substrate 6 is prevented. When temperature of substrate 6 becomes 100 deg.C less, similar aluminum 9 is laminated by sputtering. When a resist mask 10 is formed and it is then etched by the phosphoric acid, a lower wiring 12 having the tapered upper side surface 11 can be formed because the etching speed of aluminum 9 is superior. When the resist 10 is removed and the inter-layer insulating film 13 is deposited, it is formed almost in the same thickness. Accordingly, even when the upper wiring 16 is provided, disconnection does not occur at the crossing area. |
