| 摘要 |
PURPOSE:To provide an electrophotographic material which exhibits excellent sensitivity to light in a visible and IR region by providing a specific electrostatic charge blocking layer, photoconductive layer and surface reforming layer on the substrate of said material. CONSTITUTION:An electrostatic charge blocking layer 2 of 100Angstrom -1mum thickness consisting of amorphous hydrogenated and/or fluorinated silicon carbide is formed on a backing substrate 1. A photoconductive layer 3 of 2-80mum thickness consisting of nitrogen atom-contg. amorphous hydrogenated and/or fluorinated silicon is formed on the layer 2. A surface reforming layer 4 of 100- 5,000Angstrom consisting of an inorg. material layer is further formed on the layer 3. Since the layer 3 is formed of nitrogen-contg. a-Si in the above-mentioned way, said layer exhibits excellent sensitivity to the light in a visible and IR region by controlling the quantity of nitrogen and the intrinsic resistance is controlled as desired with the quantity of nitrogen and the rate of deping impurities. |
