发明名称 |
SOS Substrate for semiconductor device |
摘要 |
The invention provides an SOS substrate for a semiconductor device wherein an epitaxial silicon layer which has an index of plane (100) is formed on a single crystal sapphire plate which has an index of plane (1012). An orientation flat is formed at an incline angle of 2.1 to 2.2 DEG with respect to a [011] or [011] direction on the surface of the epitaxial silicon layer which has the index of plane (100). The direction of the orientation flat on the surface of the sapphire plate is aligned with the direction of a cleavage plane of the sapphire plate.
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申请公布号 |
US4442178(A) |
申请公布日期 |
1984.04.10 |
申请号 |
US19820422371 |
申请日期 |
1982.09.24 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
KIMURA, MINORU;TAKEUCHI, BUNZI |
分类号 |
H01L21/205;B28D5/00;H01L21/20;H01L21/304;H01L21/86;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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