| 摘要 |
PURPOSE:To enable to engrave an identification mark which can not be worn away easily on the field oxide film or the passivation film of the titled semiconductor device by a method wherein a photoresist layer is formed on the whole surface of an insulating layer, then a pad mask is positioned and an exposure, a developing and an etching processes are performed on said photoresist. CONSTITUTION:After an SiO2 layer 18 for passivation has been formed, a photoresist layer 19 is formed by coating thereon. Then, the memory mask 11 which was used in the preceeding process is matched together with the pad mask 15, and an exposure is performed on the photoresist layer 19. As a result, the light which passed through an identification mark 11b passes through the window 15 of the pad mask 15, and irradiated on the photoresist 19. When the photoresist 19 is developed, the part corresponding to the identification mark 11b is removed, and an insulating layer 18 for passivation is exposed. Accordingly, a concavity 21 corresponding to the identification mark 11b can be formed in the prescribed depth by performing an etching. After the identification mark 11b has been engraved on the insulating layer 18 for passivation as above-mentioned, the photoresist layer 19 is removed, and all the manufacturing processes are completed. |
