| 摘要 |
PURPOSE:To produce the titled laser oscillating with large output and excellent reproducibility by a method wherein several shallow grooves are provided in parallel with one another on the central part of a resonator in the longitudinal direction thereof while another deep groove containing said shallow grooves is provided around both reflectors cutting steps in an active layer, and current injecting regions are provided only on the shallow grooves. CONSTITUTION:Several V type grooves are etched with Br2+CH3OH mixed solution on the surface (100) of a P-GaAs substrate 10 utilizing an SiO2 film as a mask while the region around both reflectors is further etched with the mixed solution of H3PO4+H2 O+CH3OH in the direction of (01-1) utilizing another new mask to produce a deep groove containing the V type grooves with excellent reproducibility. Next the central groove is buried with a P-Al0.4Ga0.6As layer 11 while an Al0.15Ga0.85As active layer 12 with no additive, an N-Al0.27Ga0.73As layer 13, an N-Al0.4Ga0.6As layer 14 and a P-GaAs cap layer 15 are continuously grown on the flat surface making the central layers 11, 12 adjoin the guide layer 13 of the stepped part. A hole is made into the SiO2 film 15 providing the hole with an S diffusion layer 17 while two electrodes 18, 19 are provided respectively on the top and bottm surface. In such a constitution, the output may be increased outstandingly because the beams are oscillated through the guide layer 13 subject to no heating damage at all. |
