Unipolar voltage non-volatile JRAM cell

摘要

A non-volatile JRAM cell is constructed to require only positive voltage for programming and erasing of data in the cell. The "well" region of the cell JFET device may be implanted with an impurity concentration that will permit lower breakdown voltage or the non-volatile gate may overlap the JFET gate sufficiently to be able to have the same effect, or some combination of both may be used. This allows the cell to be erased using voltages of one polarity.