Semiconductor with pn - transition(s) - for luminescent diodes in optoelectronic coupling elements by melt epitaxy

摘要

Semiconductor element with a least one pn-transition, esp. luminescent diodes, has layers forming semi-conductor element applied to semiconductor substrate by melt epitaxy, using melt simultaneously contg. constant concns. of at least 2 doping elements. There is strong increase in degree of efficiency for optical coupling. Active zones, e.g. pn-transition, are sufficiently removed from growth boundary, so that high light yield and/or life are attained. Pref. element has AIIIBV, esp. GaAs or Ga1-xAlxAs substrate, with gp. IV elements, esp. Ge and Sn, pref. in 1:50-60 ratio (in mole %) as dope, transition temp. pref. being 870 degrees C.