发明名称 LEAD FRAME FOR SEMICONDUCTOR
摘要 PURPOSE:To contrive to laminate an Ag plated layer by restraining the deterioration of characteristics due to the discoloration of the Ag plated layer by a method wherein an Ni-Sn alloy layer and the Ag plated layer are successively provided at a specific part on an Ni base metallic layer. CONSTITUTION:The base metallic layer 2 with Ni as the substrate is provided on a substrate 1 composed of Cu or Cu alloy. The Ni-Sn alloy layer 3 and the Ag plated layer 4 are successively provided at the part of lead terminal 6 connected to the semiconductor element fixing part 5 and a semiconductor element on the metallic layer 2 by means of metallic fine wires. Then, the adhesion property between the plated layer 4 and the metallic layer 2 does not decrease even in high temperature heating by packaging process; accordingly the decrease of characteristic due to the discoloration of the plated layer 4 can be restrained.
申请公布号 JPS5936954(A) 申请公布日期 1984.02.29
申请号 JP19820147318 申请日期 1982.08.25
申请人 HITACHI DENSEN KK 发明人 OKABE NORIO;YOSHIOKA OSAMU;SONEDA SEIJI;OGINOME NOBORU
分类号 H01L23/50;H01L23/495 主分类号 H01L23/50
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