| 摘要 |
PURPOSE:To obtain the bump of high stability by coating an electrode section formed to a semiconductor wafer with a barrier film and a conductive metallic film and removing the unnecessary sections of these films through dry etching when the solder bump is formed to the electrode section. CONSTITUTION:The barrier film and the conductive metallic film of excellent plating property are formed to the whole surface of the semiconductor wafer in which sections except an Al electrode section are coated with a wiring protective film. Cr, NiCr, Mo or the like is used as the barrier film, and Cu, Ni, Au or the like is used as the conductive metallic film. The sections except the electrode section are coated with a positive group resist, and the bump is formed to the electrode section by a solder plating liquid. The resist is removed by using a solvent, which does not erode solder, the unnecessary sections of the barrier film and the conductive metallic film are removed through a dry etching method, and the solder bump is completed. Accordingly, the solder bump of excellent quality is obtained while simplifying processes. |
