发明名称 |
MONOLITHIC INTEGRATED CIRCUIT STRUCTURE INCORPORATING DIODE BRIDGE RECTIFIER |
摘要 |
<p>D-22646 Monolithic integrated circuit structure incorporating a full wave diode bridge rectifier of four Schottky diodes. A body of silicon includes four zones of N-type material. The first and second N-type zones are separated from each other by encircling and intervening P-type material. The third and fourth N-type zones are contiguous. A Schottky barrier is formed adjacent to the surface of each zone by a layer of a mixed silicide of deposited titanium and tungsten. A first conductive member is connected to the N-type material of the first zone and the silicide layer of the third zone. A second conductive member is connected to the N-type material of the second zone and the silicide layer of the fourth zone. A third conductive member is connected in common to the silicide layers on the first and second zones. A fourth conductive member is connected to the N-type material of the third and fourth zones. An AC voltage applied across the first and second conductive members produces a DC voltage across the third and fourth conductive members.</p> |
申请公布号 |
CA1162656(A) |
申请公布日期 |
1984.02.21 |
申请号 |
CA19810375106 |
申请日期 |
1981.04.09 |
申请人 |
GTE LABORATORIES INCORPORATED |
发明人 |
STOBBS, WILLIAM |
分类号 |
H01L23/522;H01L27/08;(IPC1-7):H01L29/91;H01L29/48 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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