| 摘要 |
PURPOSE:To make it possible to obtain a monolithic semiconductor, by providing a piezoelectric thin film surface wave transducer between both a collimation lens and a Fourier transformation lens, which are arranged on an As-S series thin film optical waveguide provided on a sapphire substrate. CONSTITUTION:An As-S series thin film optical waveguide 12 is provided on a sapphire substrate 11. A collimation lens 14 and a Fourier transformation lens 15 are sequentially arranged in the propagating direction 13 of light on the waveguide 12. A piezoelectric thin film surface wave transducer 17 is provided on the substrate 11 so as to cross the waveguide 12 at a right angle between both lenses 14 and 15. In this case, e.g., a ZnO piezoelectric thin film is used as a constituting material of the transducer 17. A facing electrode 22, a ZnO piezoelectric thin film 18, and a pectinated electrode 19 are sequentially laminated on an amorphous layer 21, which is provided on the substrate 11. Thus the transducer 17 is constituted. In this way, e.g., monolithic integration of a semiconductor element such as a laser and an acoustooptic element can be formed on the substrate 11. |
