发明名称 |
Method of making high dielectric constant insulators and capacitors using same |
摘要 |
An improved method of fabricating a stable high dielectric constant and low leakage dielectric material includes oxidizing at a temperature of about 400 DEG C. or higher a layer of a transition metal-silicon alloy having 40% to 90% transition metal by atomic weight to produce a silicate or homogeneous mixture. The mixture includes an oxide of the transition metal and silicon dioxide. The alloy may be deposited on, e.g., a semiconductor or an electrically conductive layer that is oxidation resistant, and the thickness of the mixture or oxidized alloy should be within the range of 5 to 50 nanometers. By depositing an electrically conductive layer on the homogeneous mixture, a capacitor having a high dielectric, low leakage dielectric medium is provided.
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申请公布号 |
US4432035(A) |
申请公布日期 |
1984.02.14 |
申请号 |
US19820387315 |
申请日期 |
1982.06.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
HSIEH, NING;IRENE, EUGENE A.;ISHAQ, MOUSA H.;ROBERTS, STANLEY |
分类号 |
C01B33/12;B05D5/12;C01B33/113;H01B3/02;H01G2/12;H01G4/06;H01G4/08;H01G4/10;H01L21/314;H01L21/316;H01L21/822;H01L27/04;H01L29/94;(IPC1-7):H01G4/10 |
主分类号 |
C01B33/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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