| 摘要 |
PURPOSE:To improve light emitting efficiency and life, by growing an Si doped layer on a GaP substrate, then growing the layer, from which the Si is removed, with the same conductive type maintained. CONSTITUTION:GaP melt, in which a minute amount of Si is included, is contacted with an N type GaP substrate, and an N layer including the Si is epitaxially grown. Thereafter, the N layer is continued to grow, and finally the N layer is grown in an atmosphere of an nitrogen compound, e.g. ammonia. At the last growth of the N layer, ammonia gas and the Si in the solution are reacted, and the deposition of Si3N4 and the like is performed. Since the Si in the melt can be substantially removed, the N layer having low impurity concentration is formed. Thereafter a P layer is grown on said N layer. In this manufacturing method, high light emitting efficiency is obtained, and an element having a long life can be obtained. |
