| 摘要 |
PURPOSE:To obtain a resist composition withstanding reactive sputter etching with O2, useful as a mask during the etching of a thick org. film, giving easily a pattern with high resolution, and suitable for use in the formation of a fine pattern for a semiconductor integrated circuit, a magnetic bubble memory, etc. by using a high molecular compound contg. specified monomer units as a resist material. CONSTITUTION:A high molecular compound contg. monomer units represented by formula I (where R is lower alkyl) is used as a principal component to obtain a resist material. The compound is not hydrolyzed even when allowed to stand over a long time after coating on a substrate. |
