Process for patterning polyimide layers on semiconductor systems

摘要

In a process for the fine patterning of polyimide layers on semiconductor systems, a whole-surface silicon dioxide layer (3), which is patterned in accordance with the desired patterning of the polyimide layer (2) by means of photolithography, is deposited on a polyimide layer deposited over the entire surface of a semiconductor substrate (1). The polyimide layer (2) is then patterned by means of a selective etching process using the patterned silicon dioxide layer (3) as an etching mask. <IMAGE>