发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To enhance assembling and manufacturing yield of the semiconductor device by a method wherein an insulating resin film is formed on the surface of a semiconductor wafer,and a probe is made to come in contact with an electrode breaking through the insulating resin film thereof to perform a probe test. CONSTITUTION:A polyvinyl alcohol liquid is jetted with a spray on the semiconductor wafer 11 (containing the electrode 3 and regions 1, 2) formed with a high voltage semiconductor element, the volatile matter of alcohol, etc., are evaporated, and the PVA film 12 is coveringly formed. After the whole surface of the semiconductor wafer 11 is protected completely with the PVA film 12, a probe 13 is made to come in contact with the electrode at the probe test. The electrode can be confirmed favorably because the PVA film 12 is transparent, and because the film is very soft, the probe 13 can be made to come in contact with the base electrode 3, etc., breaking through the film with the tip thereof to hold ohmic contact. Quality of the semiconductor element is discriminated thereby, and after a red mark, for example, is adhered to an inferior goods, dicing is performed with a dicing tool 14.</p>
申请公布号 JPS593943(A) 申请公布日期 1984.01.10
申请号 JP19820113692 申请日期 1982.06.29
申请人 FUJITSU KK 发明人 IWAZAWA SHIGEO
分类号 H01L21/301;H01L21/66 主分类号 H01L21/301
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