发明名称 METHOD OF KEEPING SURFACE STRUCTURE ON SEMICONDUCTOR SURFACE
摘要 The integrity of surface structural features (e.g., distributed feedback gratings) in Group III-V compound semiconductors is preserved during heating (e.g., subsequent LPE regrowth) by a thin coating containing a transition metal (e.g., Os, Ru or Rh). DFB-DCPBH InP/InGaAsP single frequency lasers made in this way are also described.
申请公布号 JPS62237722(A) 申请公布日期 1987.10.17
申请号 JP19870071950 申请日期 1987.03.27
申请人 AMERICAN TELEPH & TELEGR CO <ATT> 发明人 DANIERU POORU UIRUTO
分类号 H01L21/20;H01L21/208;H01L21/324;H01L33/00;H01S5/00;H01S5/028;H01S5/12;H01S5/227;H01S5/323 主分类号 H01L21/20
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