| 摘要 |
PURPOSE:To obtain high dielectric strength, and to reduce an area requiring for a wiring cross by utilizing an N<+> buried diffusion layer formed around an isolation island and forming a plurality of contacts of N<+> buried diffusion layer Al wiring in the same isolation island. CONSTITUTION:In contact sections 19, 20, 21 among Al wiring 15, 16, 17 and the N<+> buried diffusion layer 22, each wiring 15, 16, 17 is each connected to the N<+> buried diffusion layer 22 of the periphery of the isolation island through diffusions 23a, 23b, 23c, for the N<+> contacts. Accordingly, the crosses by a plurality of wiring 16, 17 branched from one wiring and other wiring 13, 14 can be formed collectively in the same isolation island, and the area requiring for the wiring crosses can be reduced. Since the Al wiring 13, 14 are wired on the thick section of an oxide film 25, dielectric strength among the Al wiring 13, 14 and the N<+> buried diffusion layer 22 is high, and the layer 22 can be used for crosses among wirings of large potential difference. |
