Method for the formation of polycrystalline silicon layers, and its application in the manufacture of a self-aligned, non planar, MOS transistor

摘要

A method for forming a self-aligned MOS power transistor. A layer of silicon nitride is deposited uniformly over a plate with limited oxide zones. The plate is then placed in an acid bath and subjected to a potential difference. Only the zones of the polycrystalline silicon layer which are over the silica zones remain.