MEASURING METHOD OF BASE LINE OFFSET VALUE AND RETICLE USED FOR IT

摘要

PURPOSE:To measure a base line offset value accurately by using a reticle provided around an alignment mark for a reduced-size projecting and exposing device where the alignment position and an exposure position are spaced. CONSTITUTION:A stage 2 reciprocates along the base line offset value l between the alignment position A and exposure position B. The alignment mark 6 of the reticle 4 and the mark formed previously on a wafer 1 are utilized at the position A for alignment and then photoresist on the surface of the wafer 1 is exposed and developed at the position B to measure the deviation epsilon between a present reference mark 8 and a mark 6 formed in this time. The mark 6 is in the center of the reticle 4, so the distortion of a lens in exposure is zero according to the lens characteristics and the position relation between A and B is therefore adjusted so that the deviation epsilon which is variation in offset value l is eliminated. Thus, two patterns have no deviation and the yield is improved.