SURFACE TREATMENT METHOD FOR SEMICONDUCTOR

摘要

PURPOSE:To obtain a surface of less impurities by heating the surface of a poly Si in a vacuum at a specific temperature for a fixed time. CONSTITUTION:A sample wherein the poly Si 3 is deposited on a Si substrate 1 via a thermal oxide film 2 is heated in a vacuum at 750-950 deg.C for 10min after washing with fluoric acid. Then, the amounts of oxygen and carbon of the surface of the poly Si remarkably decrease. In the meanwhile, the crystal grain diameter of the surface of the poly Si after heating does not vary.