| 摘要 |
PURPOSE:To reduce the specific resistance and speed up operations, by using Mo and Si2 for wiring and electrode films. CONSTITUTION:A p type Si substrate 1 is thermally oxidized, and thus an Si oxide film 2 of approx, 8,000Angstrom is formed and patterned. Next, a gate oxide film 3 of approx. 800Angstrom is formed by further oxidation, and the patterning at the part of the electrode is performed. Then, an MoSi2 film 4 of approx. 5,000Angstrom is formed by depositing silicone and molybdenum simultaneously. Where, the diffusion of POCl3 is performed from the surface, resulting in the formation of a region 6 of ohmic contact. The ion implantation of arsenic is performed through the patterning process, and thus a source region 7a and drain region 7b are formed. A SiO2 film 8 by a CVD method is formed and decided as a passivation film. Finally, wirng is performed with an aluminum film 9.
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