| 摘要 |
According to this invention a process for growing a crystal from a compound in a solution in which the compound has a negative temperature coefficient of solubility by suspending a seed crystal of the compound in a saturated solution (3) of the compound, comprises directing infra- red radiation substantially on the seed crystal (1) or in the immediate vicinity thereof. The infra-red radiation is absorbed by the surface of the seed crystal, heating it to a higher temperature than the solution and causing preferential deposition of solute to occur thereupon and not on the walls of the vessel. The invention may particularly be used for growing crystals of berlinite. <IMAGE> |
