| 摘要 |
PURPOSE:To prevent the projection of a PSG from being etched by forming an etching preventive layer on the upper layer of a PSG insulating film. CONSTITUTION:A lower layer insulating film 12 is formed on a semiconductor substrate 11, and aluminum wirings 13a, 13b and the like are formed on the film. When a phosphorus silicate glass (PSG) film 14 is formed by a gas phase growing method on the wirings, a projection 13' might be produced on the aluminum wirings 13b. At this time the projection 14' of the film 14 becomes thin. When a hole is opened at the film 14, the surface of the film 14 is inactively sputter etched, and a PSG modified layer 15 is formed on the surface. Then, a window 17 which exposes a hole forming region on the surface is opened at a mask film 16. The layer 15 which is exposed on the surface in the window 17 is removed with wet etchant, the film 14 is removed by a dry etching method, and a hole 18 is opened. Thereafter, the mask 16 is removed, and the second layer wirings 19 and the like are formed. |
