| 摘要 |
PURPOSE:To obtain a high-integration semiconductor device by a method wherein wirings formed by diffused layers on a substrate surface and wirings formed by gate electrodes are allowed to freely intersect each other in a process for integrating MIS-type transistors. CONSTITUTION:Thick, element-isolating oxide films 6 are formed on an Si substrate 1 of the P type (100), wherebetween a first gate oxide film 3 is provided. First gate electrodes 2a, 2b are built of polycrystalline Si on the film 3. The electrode 2a is to be the gate electrode for a first MIS-type transistor while the electrode 2b is to cover the region for the second MIS-type transistor formation. In the next process, implantation is effected of As ions, with the electrodes 2a, 2b serving as masks, for the formation of first diffused layers 4, 4'. The electrode 2b is then removed and a second gate electrode 7 is formed of polycrystalline Si on the electrode 2a with the intermediary of an oxide film 12. The electrode 7 is designed into a wiring layer intersecting a wiring layer formed by the layer 4'. |
