| 发明名称 |
Method of manufacturing a buried contact in semiconductor device |
| 摘要 |
Method of forming buried contact in recessed gate MOSTEK technology is provided. When the buried contact is desired, a MOS transistor is formed and the gate and underlying gate oxide layer removed to expose the substrate. A conducting layer through the aperture formed makes contact to the substrate.
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| 申请公布号 |
US4413402(A) |
申请公布日期 |
1983.11.08 |
| 申请号 |
US19810313569 |
申请日期 |
1981.10.22 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ERB, DARRELL M. |
| 分类号 |
H01L21/74;H01L21/762;(IPC1-7):H01L21/26 |
主分类号 |
H01L21/74 |
| 代理机构 |
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| 地址 |
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