| 摘要 |
PURPOSE:To contrive the improvement of life time and reliability and enable the laser oscillation in a wide range of wavelengths including yellow to red and further near infrared by a method wherein a double hetero-junction is formed of five element mixed crystal compound semiconductor. CONSTITUTION:A clad layer 2 constituted of (Alz'Ga1-z')x'In1-x'ASy'P1-y' as the five element mixed crystal has a structure of crystal growth on a substrate 1 constituted of (100)GaAs as two element mixed crystal so as to take lattice alignment therewith, and further an active layer 3 constituted of (AlxGa1-z)x In1-xASyP1-y as the five element mixed crystal has a structure of crystal growth on this clad layer 2 so as to take lattice alignment therewith in the same manne. Besides, a clad layer 4 constituted of (Alx'Ga1-z')x'In1-x'ASy'P1-y' has a structure of crystal growth on the active layer 3 so as to take lattice alignment therewith. Since Al, Ga, In, and P are contained, and As is contained in the five- element mixed crystal, the problem of meltback, miscibility gap, etc. do not occur in the process of crystal growth. |
