| 摘要 |
PURPOSE:To bring a defective picture element into a complete inconspicuous state when it is actually used by a method wherein the gate electrode located on an MOS type field-effect transistor is cut off from a gate line, and the source and the drain of said MOS type transistor are short-circuited. CONSTITUTION:When a short-circuit occurs between the gate line 8 and a source line 9, the gate line 8 and the gate electrode of the transistor are isolated by a laser beam following the broken lines a-b as shown in the diagram. The gate electrode, a source electrode 14 and a drain electrode 15 are short-circuited at the position of arrows a1 and b1. As a result, the average voltage of a data signal is added to the picture element driving electrode, thereby enabling to bring the defect into a complete inconspicuous state. |
