| 摘要 |
PURPOSE:To obtain a crystal layer with less abnormal growth by executing liquid phase epitaxial growth utilizing a cover for solution having a thermal conductivity which is lower than that of a substrate supporting means. CONSTITUTION:Heat radiation from the upper part of crystal growth solution 7 is kept lower than the conventional one using a cover 24 for the solution made of quartz having a thermal conductivity lower than that of conventional high purity carbon. Thereby, the distance between isothermal lines 25 within the solution 7 as it goes toward the lower part, not generating conventional convection. Therefore, abnormal growth is not generated at the edge part of a semiconductor substrate 5. |
