| 摘要 |
PURPOSE:To transfer a fine bubble with a large bias magnetic field margin even when a gap is wide, by providing an area of an ion-implanted layer or ''Permalloy'' thin film layer at the gap part of a transfer path with a transfer pattern. CONSTITUTION:In figures slanting-line parts 31, 32, 33 and 34 are ion-implanted areas. Another figure shows the graph of the comparison of the bias magnetic field margin and the ion implantation of gap parts makes it evident that when the intensity of a revolving magnetic field is 50 oersted, the upper limit of the bias magnetic field margin increases by 15 and 20 oersted. In the latter figure, 51 is the margin when the ion implantation is not performed and 52 and 53 are the margins of a chip in this example. |
