COMPLEMENTARY FIELD-EFFECT TRANSISTOR INTEGRATED CIRCUIT DEVICE

摘要

Lepselt-49 COMPLEMENTARY FIELD-EFFECT TRANSISTOR INTEGRATED CIRCUIT DEVICE A CMOS integrated circuit structure which is not susceptible to latchup utilizes insulated-gate field-effect transistors having Schottky barrier source and drains (SBIGFET). In the preferred embodiment, the n-channel device of an adjacent complementary pair of transistors in a CMOS circuit is provided with diffused source and drain while the p-channel device of the pair is provided with PtSi-Si Schottky barrier contact source and drain. Such a structure completely eliminates the parasitic pnpn structure which causes the latchup problem in conventional CMOS structures.