发明名称 CU ALLOY FOR LEAD OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain a Cu alloy suitable for manufacturing leads with high bendability, strength and heat resistance by a method wherein the material is composed of Cu with inevitable impurities, not more than 0.0010wt% oxygen and a total of 0.01-0.3wt% of one more out of Ni, Cr, Zr and rare earth elements, respectively weighing 0.05-1.0wt%. CONSTITUTION:Ni is added to ordinary Cu not containing oxygen to increase strength and heat resistance without degrading its electric and thermal conductivity. One or more out of Cr, Zr and rare earth elements are further added to the resultant Cu alloy to provide bendability while enhancing said features. The procedure for the production of such an alloy consists of melting together in a graphite-made crucible the accurately measured quantities of said substances, the casting of the molten metal, and the hot rolling of the resultant ingot. Cold rolling and annealing processes are repeated, to obtain a product taking a prescribed board form.
申请公布号 JPS58155746(A) 申请公布日期 1983.09.16
申请号 JP19820038680 申请日期 1982.03.11
申请人 FURUKAWA DENKI KOGYO KK 发明人 YAMATO KOUZOU;AKASAKA KIICHI;SHINOZAKI SHIGEO;KUROYANAGI TAKU
分类号 C22C9/00;C22C9/06;H01L23/48;H01L23/495 主分类号 C22C9/00
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