| 摘要 |
PURPOSE:To lengthen the service life of a small number of carriers, and to increase output currents by laminating nonsingle crystalline layers without mixing mutual impurities in respectively independent reaction chamber and forming PIN<->N or NIP<->P junctions. CONSTITUTION:Substrates 1 are entered into a reserve chamber 23, air is discharged, N2 21 is filled, a door 55 is opened and closed, and the substrates are heated at approximately 400 deg.C in a heating chamber 24. The concentration of O2 in a growth layer can be reduced up to 1X10<17>-1X10<15>cm<-3> through the treatment. IN<->N Layers are each laminated onto P type SixO1-x (0<x<1) in succession in the predetermined thickness through plasma vapor growth without being brought into contact with atmospheric air in the reaction chambers 25-28. The mixing of the impurities of adjacent reaction chambers is prevented in the reaction chambers at the same time, and the concentration of the impurities is brought to 5X10<16>cm<-3> or less in I layers and to approximately 7X10<16>-1X 10<18>cm<-3> in P or N layers. According to such a constitution, a small number of carriers among carriers generated by light irradiation are easily drifted to an electrode, the service life of the carriers is lengthened, and large output currents are obtained. |
